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Nanoquest I Load Lock Ion Beam Etch
The Intlvac, Nanoquest I Load Lock Ion Beam Etching System
is an idea platform for etching single wafer substrate up to
3". Configured with a high cooling flow substrate stage,
the system can etch through a photo resist mask to produce
patterned substrates on any material. The unique design of
the stage allows it to rotate and tilt the substrate during
etching and maintain cooling while still under high vacuum.
Substrates are bonded onto a substrate carrier that transfers
to stage surface without the use of tape or greases.
Vertical Load Lock design keeps the chamber under high vacuum
and reduces cycle times. A unique transfer assist controls
the movement of the wafer transfer and prevent mishandling.
The system is housed in a compact one-piece frame with integral
electronics rack to minimize lab or clean room space. High
vacuum design principles ensure quick cycle times and low
ultimate pressure performance. UHP Gas distribution ensures
stable ion source operation.
The chamber is a 24” diameter, X 24” long cylinder
with a hinged front door and welded stainless steel cooling
passages. Substrate stage is door mounted. Stainless steel frame
with integral instrument rack. Rack mounted touch screen with LabView
interface, and Either Net microcontrollers allow for automated:
pump down,
pressure control, gas flow control, and ion source operation.
The system can be configured with 3cm D.C., 5cm R.F., or 8cm D.C
Kaufman style gridded ion sources, depending on the required
etch uniformity.
> Download
PDF of Nanoquest I Load Lock Brochure.
> Download
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