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Ion Beam Etch and Milling

Ion Beam Etch and Milling is a dry plasma etch method which utilizes a remote broad beam ion/plasma source to remove substrate material by physical inert gas/or chemical reactive gas means. Ion Milling is used where traditional plasma etch fails or is difficult such as resistant materials, new materials, or very thin layers or multi-layers. Intlvac's ion beam milling systems offer independently controllable energy, current and angle of ion impact giving full control over pattern profile.

Ion Beam Etch and Milling

Universal Material Etchant

Any material can be removed including noble, transition and refractory metals, alloys, dielectrics, insulators, semiconductors, and polymers.
Complex Multilayer Stacks

Without the need to optimize chemical reactants, diverse materials can be precisely removed in multilayer stacks, stopping on specified layer.
Deep MEMS and Photonic Devices

Nanometer to multiple micrometer etch depths for metals and dielectric materials, including noble metals and LiNbO³.
Compound Semiconductors & Materials

Device functions vary based on material properties: electrooptic, feroelectric, piezoelectric, electrochemical, electromagnetic, acoustoelectric and superconductor.
Angled Gratings and Waveguides

Variable angle of incidence etch capability enables optimized feature angles in quartz slanted gratings and diamond waveguides.
Reactive Gas Enhancement (CAIBE/RIBE)

Higher etch rates, selectivity and aspect ratios can be achieved when reactive etchant gases are added to the ion beam process.
Delayering IC Chips

Non-contact method to uniformly remove electronic materials from IC chips in a layer by layer process.

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Graduated Etch Profile

Motorized proximity mask with functional parameters to transfer a variable etch depth across substrate.
Combinatorial Areal Step Etching

Two-dimensional motorized proximity mask with step functionality to etch substrate sections for DOE efficiencies.