Ion Beam Sputter Deposition (IBSD) is a physical vapor deposition method which utilizes a remote broad ion/plasma beam source to bombard a grounded (floating) sputter target. Since the sputter target is not powered as would occur with a magnetron cathode, IBSD minimizes particles due to high energy arcs. The IBSD process occurs at a lower decade pressure than magnetron sputtering, resulting in a long mean free path of the atoms/molecules coming off the target. Without thermalization, these atoms retain their native energy as they condense on a substrate, contributing to dense (void-free) film growth.