EH1000 End-Hall Ion Source

Efficient . Stable . Production Ready

The Intlvac eH1000 End-Hall Ion Source is engineered to deliver efficient, high-current ion beams for medium-sized vacuum systems. Designed for cost-effective operation and simplified maintenance, the eH1000 provides stable plasma performance across a wide discharge range. Its gas-efficient architecture and removable anode assembly make it ideal for production and research environments requiring consistent ion assist, pre-cleaning, and low-energy etching performance. Optimized for reliability and uptime, the eH1000 integrates seamlessly into load-lock and ultra-high vacuum (UHV) compatible systems.

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EH1000 Ion Source – Compact Industrial Configuration

EH1000 End-Hall Ion Source

Efficient . Stable . Production Ready

The Intlvac eH1000 End-Hall Ion Source is engineered to deliver efficient, high-current ion beams for medium-sized vacuum systems. Designed for cost-effective operation and simplified maintenance, the eH1000 provides stable plasma performance across a wide discharge range. Its gas-efficient architecture and removable anode assembly make it ideal for production and research environments requiring consistent ion assist, pre-cleaning, and low-energy etching performance. Optimized for reliability and uptime, the eH1000 integrates seamlessly into load-lock and ultra-high vacuum (UHV) compatible systems.

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EH1000 Ion Source – Compact Industrial Configuration

Key Features

Gridless End-Hall Architecture

No grids to align, replace, or maintain
Rugged construction with reduced particulate generation
Lower maintenance compared to gridded sources

High Current / Low Energy Beam Output

Beam current up to 2000 mA
Mean beam energy: 35–210 eV
Ideal arrival ratios for dense film growth and surface activation

Broad Divergent Beam

60° beam divergence
Uniform coverage across large process zones
Supports high throughput production runs

Quick-Change Anode Module

Removable anode assembly
Swap module in minutes while chamber remains installed
Maximizes system uptime and simplifies maintenance logistics

Stable Plasma & Neutralization Control

Dedicated regulated electron source
Precise charge balance for dielectric and electrostatic-sensitive substrates
Consistent beam quality independent of chamber conditions

Applications

The eH1000 enhances film performance and surface preparation in:

Ion Beam Assisted Deposition (IBAD)
In-situ substrate precleaning
Load-lock preclean
Diamond Like Carbon (DLC) deposition

Surface modification
Low-energy ion etching
Polymer substrate processing

Applications

The eH1000 enhances film performance and surface preparation in:

Ion Beam Assisted Deposition (IBAD)
In-situ substrate precleaning
Load-lock preclean
Diamond Like Carbon (DLC) deposition

Surface modification
Low-energy ion etching
Polymer substrate processing

Technical Specifications

Parameter

Specification

Discharge Power

850 W max

Anode Current

8 A

Beam Current

2000 mA max

Anode Voltage

300 V max

Mean Beam Energy

35 – 210 eV

Parameter

Requirement

Operating Pressure

Up to 1 × 10⁻³ mbar

Gas Flow

1 – 100 sccm

Operating Gases

Ar, Xe, Kr, O₂, N₂, Organic Precursors

Parameter

Value

Height

100 mm

Diameter

5.7 in

Weight

3.6 kg

Cooling

Radiant (no water cooling required)

Plasma and Beam Performance

The eH1000 utilizes a high-density DC discharge within a magnetically confined plasma chamber. Electrons emitted from the cathode are accelerated toward a DC-biased anode, efficiently ionizing neutral process gases.

This mechanism produces:

High plasma density across multiple gas chemistries
Stable discharge behavior over wide operating ranges
Efficient plasma conversion for reduced gas consumption

The resulting ion beam is divergent and uniform, enabling consistent process results across large substrate areas. High ion current supports industrial throughput, while low beam energy prevents surface damage and preserves delicate interfaces.

Serviceability and Operational Efficiency

The eH1000 incorporates a patented quick-change anode module that allows rapid removal and replacement without removing the full source body from the chamber.

Key operational advantages include:

Minimized production interruptions
Bench-top servicing of removed modules
Reduced maintenance time between runs
Lower lifecycle cost compared to gridded sources

Optional neutralizer configurations ( including non-immersed designs ) further extend maintenance intervals for long continuous production runs.

Why Choose Intlvac Thin Film?

Intlvac Thin Film systems are designed to support precision thin film processing in both research and production environments. The eH1000 integrates into a range of vacuum deposition platforms, including:

Optical coating systems
Ion-assisted deposition (IAD) configurations
In-situ and load-lock pre-clean modules
Surface activation and low-energy ion treatment processes

By leveraging stable end-Hall plasma generation and efficient beam delivery, the eH1000 supports repeatable process control, uniform film modification, and reliable long-duration operation within integrated vacuum systems.

Why Choose Intlvac Thin Film?

Intlvac Thin Film systems are designed to support precision thin film processing in both research and production environments. The eH1000 integrates into a range of vacuum deposition platforms, including:

Optical coating systems
Ion-assisted deposition (IAD) configurations
In-situ and load-lock pre-clean modules
Surface activation and low-energy ion treatment processes

By leveraging stable end-Hall plasma generation and efficient beam delivery, the eH1000 supports repeatable process control, uniform film modification, and reliable long-duration operation within integrated vacuum systems.